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November 2013
FQPF9N25C / FQPF9N25CT
N-Channel QFET ? MOSFET
250 V, 8.8 A, 430 m Ω
Features
? 8.8 A, 250 V, R DS(on) = 430 m ? (Max.) @ V GS = 10 V,
I D = 4.4 A
? Low Gate Charge (Typ. 26.5 nC)
? Low Crss (Typ. 45.5 pF)
? 100% Avalanche Tested
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
D
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
Parameter
FQPF9N25C / FQPF9N25CT
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
250
8.8 *
5.6 *
V
A
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
35.2 *
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
285
8.8
7.4
5.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
38
0.3
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
°C
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FQPF9N25C / FQPF9N25CT
3.29
62.5
Unit
°C / W
?2004 Fairchild Semiconductor Corporation
FQPF9N25C / FQPF9N25CT Rev. C1
1
www.fairchildsemi.com
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